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PH3254 Physics for Electronics Engineering Previous Year Question Papers - Anna University

Explore the Previous Year Anna University Question Papers of PH3254 Physics for Electronics Engineering.

2024

  • 2024 - ECE-AM-2024-PH 3254-Physics for Electronics Engineering-812375966-51510.pdf
  • 2024 - ECE-ND-2024-PH 3254-Physics for Electronics Engineering -309958884-41652.pdf

2023

  • 2023 - ECE-ND-2023-PH 3254-Physics for Electronics Engineering-992325946-21448.pdf

2022

  • 2022 - ECE-ND-2022-PH 3254-Physics for Electronics Engineering-285753509-ND22EC (4).pdf
  • 2022 - SH-AM-2022-PH 3254-Physics for Electronics Engineering-363644229-PH 3254.pdf

Important Questions - PH3254 Physics for Electronics Engineering

UNIT I: Crystallography

Part A (2 Marks)

  • Define a Unit Cell. List the seven crystal systems.
  • What are Miller Indices? State their significance.
  • Define Atomic Radius and Coordination Number.
  • Differentiate between primitive and non-primitive cells.

Part B (13/16 Marks)

  • Crystal Structures: Explain SC, BCC, FCC, and Diamond Cubic structures. Derive their packing factors.
  • Miller Indices: Explain steps to determine Miller indices and derive the interplanar distance formula for (hkl) planes.
  • HCP Structure: Discuss Hexagonal Close Packed structure. Derive c/a ratio and packing factor.

UNIT II: Electrical and Magnetic Properties of Materials

Part A (2 Marks)

  • State the postulates of Classical Free Electron Theory.
  • Define Fermi distribution function and its temperature dependence.
  • What are Giant Magneto Resistance (GMR) devices?
  • Define Drift Velocity and Mobility of electrons.

Part B (13/16 Marks)

  • Classical Theory: Derive expressions for electrical and thermal conductivity. Prove Wiedemann–Franz Law.
  • Density of States: Derive expression for density of energy states in metals.
  • Magnetic Materials: Explain origin of ferromagnetism and exchange interaction.
  • GMR Devices: Explain construction and working of GMR-based magnetic storage devices.

UNIT III: Semiconductors and Transport Physics

Part A (2 Marks)

  • Distinguish between direct and indirect bandgap semiconductors.
  • Define Hall Effect and state its applications.
  • Differentiate between Ohmic contacts and Schottky diodes.

Part B (13/16 Marks)

  • Carrier Concentration: Derive expressions for electron and hole concentration in intrinsic and extrinsic semiconductors.
  • Hall Effect: Derive Hall coefficient and explain experimental determination.
  • Fermi Level: Explain variation of Fermi level with temperature and doping (n-type & p-type).

UNIT IV: Optical Properties of Materials

Part A (2 Marks)

  • State properties and requirements of light detectors.
  • What are the advantages of LEDs over conventional sources?
  • Define Photovoltaic Effect.

Part B (13/16 Marks)

  • Optoelectronic Devices: Explain principle, construction, and working of LED and Solar Cell.
  • Quantum Wells: Discuss optical absorption and emission in quantum wells with electric field effects.
  • Photovoltaic Devices: Explain I–V characteristics and efficiency of solar cells.

UNIT V: Nano Devices

Part A (2 Marks)

  • What is Quantum Confinement?
  • Define Spintronics and state its significance.
  • What is a Quantum Dot? How is its color controlled?

Part B (13/16 Marks)

  • Quantum Structures: Explain density of states in quantum wells, wires, and dots.
  • Carbon Nanotubes (CNTs): Describe structure, properties, and applications.
  • Single Electron Transistor (SET): Explain working principle and conditions for single-electron tunneling.

Most Repeated / High-Weight Questions

Crystal structures + packing factor derivations (Unit I), Classical electron theory + Wiedemann-Franz law (Unit II - high weight), Hall effect + Fermi level + carrier concentration (Unit III - high weight), LED + solar cell + quantum wells (Unit IV), Quantum confinement + carbon nanotubes (Unit V).

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